| PART |
Description |
Maker |
| M45PE80 M45PE80-VMF6G M45PE80-VMF6P M45PE80-VMF6TG |
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
8 Mbit / Low Voltage / Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
|
http://
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| M25PE10 M25PE20 M25PE10-VMP6TG M25PE10-VMP6TP M25P |
4 Mbit Uniform Sector, Serial Flash Memory
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out
1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| M59DR032A M59DR032A100N1T M59DR032A100N6T M59DR032 |
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M45PE80-VMP6G M45PE80-VMP6TG M45PE80-VMP6TP M45PE8 |
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
|
Numonyx B.V
|
| M45PE20-VMN6P M45PE20-VMN6TP M45PE20-VMP6G M45PE20 |
2 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
ST Microelectronics
|
| M45PE16 |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
|
Numonyx B.V
|
| M25PE80 M25PE80-VMP6G M25PE80-VMP6P M25PE80-VMP6TG |
8 MBIT, LOW-VOLTAGE, PAGE-ERASABLE SERIAL FLASH MEMORY WITH BYTE ALTERABILITY, 50MHZ SPI BUS, STANDARD PINOUT
|
STMICROELECTRONICS[STMicroelectronics]
|
| M25PE40 M25PE40VMN6G M25PE40VMN6P M25PE40VMN6TG M2 |
4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout
|
STMicroelectronics
|
| M25PE2007 M25PE20-VMN6G M25PE20-VMN6P M25PE20-VMN6 |
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout
|
STMicroelectronics
|
| M25PE80-VMP6T M25PE80-VMW6P M25PE80-VMP6P M25PE80- |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
COIL CHOKE 27MH .50A RADIAL 8兆位，低电压，页面与字节可擦除串行闪存更改性，50MHz的SPI总线，标准品
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 50MHz SPI Bus, Standard Pin-out
|
STMicroelectronics N.V.
ST Microelectronics
|
| NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
ST Microelectronics
|
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
